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Information × Registration Number 0212U005697, 0112U008174 , R & D reports Title Submicron optical spectroscopy of phonon and plasmon-phonon excitation in semiconductor nanomaterials and device heterostructures. popup.stage_title Head Nikolenko Andrii Sergiyovich, Registration Date 25-12-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Spatial ordering of SiGe nanoislands grown on strained Si1-xGex buffer layers is studied. The growth of nanoislands on intermediate Si1-xGex layers is shown to not only stimulate the effect of their spatial ordering, but also to strengthen the role interdiffusion processes. Found significant increase in the islands volume during the epitaxial growth is associated with the induced by non-uniform fields of elastic strains anomaly strong diffusion of material from the buffer layer into the islands. The anisotropy of the shape and spatial ordering of islands is shown to be caused by the anisotropy of diffusion processes in spatially non-uniform fields of elastic strains. The formation of silicon nanocrystals caused by structural-phase transformation in annealed SiOx and SiOx:Er,F films is studied by micro-Raman spectroscopy. The crystallization of silicon nanoparticles is found to be much more intense in case of doped SiOx:Er,F films. It is shown that ErF3 doping combined with high-temperature annealing at 750 ° C leads to a weakening of Si nanoclusters photoluminescence and defect luminescence of SiOx matrix and enhances the photoluminescence of Er3+ ions in the near-infrared spectral range. Methodical approaches for theoretical modeling of mixed plasmon-phonon modes in the experimental Raman spectra of doped epitaxial GaN layers are developed. For confocal Raman spectra obtained by depth scanning of GaN Gunn-diode structures, modeling of phonon and mixed plasmon-phonon modes is carried out, and the spatial distribution of free charge carriers concentration and mechanical strains is figure out. Product Description popup.authors Авраменко Катерина Андріївна Коломис Олександр Федорович Насєка Юрій Миколайович Романюк Артем Сергійович Стрельчук Віктор Васильович popup.nrat_date 2020-04-02 Close