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Information × Registration Number 0212U005698, 0111U005562 , R & D reports Title Creation and investigation of the physical properties of new semiconductor structures with resonant interaction of plasma and phonon excitations. popup.stage_title Head Strelchuk Viktor Vasylyovych, Доктор фізико-математичних наук Registration Date 25-12-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Raman spectroscopy was used to study phonon excitations and effects of plasmon-phonon interaction in doped epitaxial GaN layers. Distributions of free charge carrier concentration and elastic strains in depth and along the cleaved edge of Gann-diode GaN structures with varied thickness of undoped region were obtained. High concentration of charge carriers found in nominally undoped regions of Gann-diode structures is explained by diffusion blurring of concentration profiles due to high growth temperature of epitaxial GaN layers. Spatial inhomogeneities of composition of epitaxial InxGa1-xN layers, grown on sapphire substrate with GaN buffer layer by MBE and MOVPE techniques, were studied. Frequency shift of А1LO(InхGa1-хN)-mode, caused by change of composition in depth of the structure, makes 18 cm-1, which corresponds to change in composition in the range from 32% to 45%. The observed gradual decrease (increase) of А1LO(InGaN) frequency when scanning along the growth direction of InGaN/GaN clearly indicates the gradient behavior of indium content change and relaxation of elastic strains in InGaN layers.5481 Product Description popup.authors Авраменко Катерина Андріївна Коломис Олександр Федорович Ніколенко Андрій Сергійович Насєка Юрій Миколайович Романюк Артем Сергійович popup.nrat_date 2020-04-02 Close