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Information × Registration Number 0212U005718, 0112U002845 , R & D reports Title Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices popup.stage_title Head Puzikov Vyacheslav Mikhailovich, Registration Date 26-12-2012 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 Investigated is photovoltaic effect in the isotope heterostructure formed by nanocrystalline 21R-SiC films deposited onto single-crystalline substrates with n-Si (n-SiC/n-Si heterotransition). A kinetic model of the I-V and photoelectrical characteristics of the heterostructure n-SiC/n-Si is proposed. Studied are the parameters of the I-V characteristics for the mesostructures of SHF silicon p-i-n diodes with side surfaces covered by a layer of high-resistance SiC working at 120 centigrades during 120 hours. Product Description popup.authors Лопін Олександр Володимирович Семенов Олександр Володимирович popup.nrat_date 2020-04-02 Close
R & D report
Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices
Head: Puzikov Vyacheslav Mikhailovich. Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices. (popup.stage: ). Institute for Single Crystals National Academy of Sciences of Ukraine. № 0212U005718
1 documents found

Updated: 2026-03-25


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