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Information × Registration Number 0212U005790, 0112U001947 , R & D reports Title The development of nanotechnology ZnO and CdS nanoparticles synthesis for manufacturing of light-emitting elements based on macroporous silicon structures with nanocoatings, stage 3 "Fabrication and study of macroporous silicon structures with incorporated into the microporous silicon layer ZnO and CdS nanoparticles" popup.stage_title Head Karachevtseva Liudmyla, Registration Date 28-12-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The scientific and technical concept of Stage 3 is that for the manufacture of efficient light-emitting elements based on macroporous silicon structures with nanocovers proposed the oxidation of two-dimensional macroporous silicon structures before application ZnO and CdS nanoparticles on the surface of macropores. Based on this, an important task of stage is to develop operations to reduce the concentration of non-radiative recombination centers and measurement of photoluminescence depending on the thickness of nanocoating. In accordance with the main purpose of stage: (1) The macroporous silicon structures with a layer of microporous silicon and silicon oxide thickness of 7 nm, 15 nm and 30 nm on macropores surface and ZnO and CdS nanoparticles were studied; comparative analysis of structures based on the measurement of IR absorption spectra was held and determined electric field intensity at the "macroporous silicon - nanocoating" interface; (2) were cleaned surface structures by its oxidation in dry oxygen to a thickness of 30 nm oxide and subsequent etching of oxide; (3) founds that the electric field at the Si-SiO2 interface for purified structures of macroporous silicon increases by almost an order of magnitude compared to the unrefined structures; (4) volt-watt sensitivity of macroporous silicon structures with oxide thickness of 15 nm exceeds sensitivity than of macroporous silicon structures without oxide and monocrystalline more than 5 times ( 5) photoconductivity of oxidized macroporous silicon structures depends on the thickness of SiO2 nanocoating and determined by the accumulation of positive charge in the SiO2layer; (6) founds the quantum size effects in the transition from a silicon matrix to Si nanoclusters in the SiOx matrix; (7) founds that the photoluminescence intensity of nanoparticles CdS-polyethyleneimine on the surface of oxidized macroporous silicon structures defined processes at the Si-SiO2-nanocoating CdS interface: the electric field intensity at the Si-SiO2 interface and the accumulation of positive charge in the silicon oxide layer. Product Description popup.authors Карачевцева Людмила Анатоліївна Кучмій Степан Ярославович popup.nrat_date 2020-04-02 Close