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Information × Registration Number 0212U006258, 0108U009663 , R & D reports Title "Development of technology manufactoring SiGe and Si layers be means LP CVD methods (low pressure chemical vapor deposition) for silicon monolitic microwave integrated circuits (MMIC)." popup.stage_title Head Sidorenko Volodymir Pavlovich, Registration Date 12-03-2012 Organization State Enterprise "Research Institute of Microdevices" STC "Institute for Single Crystals" of NAS of Ukraine popup.description2 The technological process epitaxial growth of SiGe and Si films by pyrolytic deposition at low pressure (LP CVD) was developed and experimentaly investigated Si Poly films. The advanced manufacturing technology MMICs was studied: a) technology based on heterojunction bipolar transistors (SiGe HBT) levels 0,5/0,25/0,13 micron with a cutoff frequency to 300 GHz, b) RF CMOS levels 65/45/32 nm with a cutoff frequency transistors to 445 GHz, c) gallium nitride AlGaN/GaN, AlInN/GaN HEMT on SiC, Si and diamond substrates. Product Description popup.authors Евтух Анатолій Антонович Попов Валентин Петрович popup.nrat_date 2020-04-02 Close
R & D report
"Development of technology manufactoring SiGe and Si layers be means LP CVD methods (low pressure chemical vapor deposition) for silicon monolitic microwave integrated circuits (MMIC)."
Head: Sidorenko Volodymir Pavlovich. "Development of technology manufactoring SiGe and Si layers be means LP CVD methods (low pressure chemical vapor deposition) for silicon monolitic microwave integrated circuits (MMIC).". (popup.stage: ). State Enterprise "Research Institute of Microdevices" STC "Institute for Single Crystals" of NAS of Ukraine. № 0212U006258
1 documents found

Updated: 2026-03-22


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