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Information × Registration Number 0212U006282, 0107U002258 , R & D reports Title Physical and physico-tecnological aspects formation and characterization of semiconductor materials and functional structures of modern electronics popup.stage_title Head Volodymyr Fedorovych Machulin, Registration Date 13-03-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Scientific researches were conducted within three interconnected directions: - elaboration technology methods for creation new functional materials and structures for modern electronics, opto-electronics, information technique and sensorics; - elaboration advanced experimental methods of diagnostics of semiconductor materials and structures with super-high space resolution and study of their physical properties connected with different kinds of electron and phonon excitations; - formation of physical principles for new generation devices. Within the first direction the following results were obtained: - Technology for growth of multilayered heterostructures based on wide-band compounds А2В6 was upgraded. - Method of SiOx films deposition was elaborated to obtain nanocrystallic inclusions as a resulrt of self-organization and structural tramsformation under high temperature annealing. - Method for low-temperature passivation of Germanium surface by oxide film with Germanium nano-inclusions has been elaborated. - The model of heteroepitaxial growth of GaN thin films by radical beam epitaxy has been developed. - Technology road was worked out for manufacturing of multi-element matrix photo-receivers based on HgCdTe by thin film technology. - High-resolution photoresists based on the films of chalcogenide glasses and methods for fabrication of high-frequency relief-phase structures have been developed. - Technology for growth of n+-n-p+-GaP diode structures by LPE for application in high-temperature micro- and opto-electronics, and thermometry has been developed. - Technology for growth of biomorphic SіС for application in medical practice has been developed. - Technology for fabrication of thermo- and radiation-stable contact systems for microwave devices has been elaborated. - The models of chemical forming of the surface were elaborated and conditions for chemical cutting, selective etching, and polishing were optimized. - Technology for fabrication of luminescent materials and structures used for modern light emitting devices has been worked out on the basis of А2В6 compounds. - The method of changing of surface selectivity of the SPR sensor with using of self-organized matrix system gold/mercaptans of different length was proposed. - Technology for fabrication of nanostructured surface for manufacturing bistable LC displays. - Method of AlN layers growth was elaborated for structures of modern electronics, opto-electronics and sensorics. - It was elaborated technology for near-surface nanostructures formation in А3В5 and А2В6 crystals and films by pulse laser irradiation aimed the manufacturing functional semiconductor nanostructures. - New technology of metallic germanium cleaning has been elaborated. Patent was obtained. Within the second direction supersensitive optic methods of substances analysis, methods of admittance spectroscopy and acoustic-emissive control of transformation of semiconductor's structure have been elaborated. It was proposed modulation-polarization method for characterization of complex nanostructured metal-dielectric films. Within third direction: - Theory of stationary and microwave electron transport in nano-sized diodes with ballistic carrier transfer has been developed. The theory takes into account space-charge effects, statistic behavior of carrier's injection into the device base, electric losses within contacts, etc. As a result realistic estimations of static and microwave effects have been obtained. - Experimental lot of silicon diode temperature sensors with five tolerance zones. Dispersion of device's characteristics within each zone varies from 0,25 К to 3,0 К. - It was proposed original technology for fabrication of diffraction gratings with anticorrelation relief that one allowed to manufacture set of devices of polariton opto-electronics. - The problem of enhancement of the EPR spectrometers sensitivity has been solved due to using new dielectric resonators with high dielectric permeability. Product Description popup.authors Cвєчников С.В. Індутний І.З. Валах М.Я. Власенко О.І. Дмитрук М.Л. Карачевцева Л.А. Кисельов В.С. Кладько В.М. Конакова Р.В. Корбутяк Д.В. Кочелап В.О. Лисенко В.С. Литовченко В.Г. Прокопенко І.В. Сизов Ф.Ф. Снопок Б.А. Тетьоркін В.В. Томашик В.М. Шварц Ю.М. Шутов С.В. popup.nrat_date 2020-04-02 Close