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Information × Registration Number 0212U006324, 0110U004668 , R & D reports Title Development of the nanotechnology of the fabrication of nanostructured carbonized silicon based materials and development of the light-emitting elements in broad range of wavelength. popup.stage_title Head Lysenko V.S., Registration Date 20-03-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The effect of physico-technological conditions of the thermal treatments in acelitelene ambient on the formation of graphie-like deposite in nano-pores of porous silicon layers have been studied. It was sgoen that increase of carbon incorporation deteriorates light-emiting properties of SiO2:C material. From the other hand the formation of silicon-carbon bonds was shown to develop photoluminescence efficiency. Carbonization conditions favorable for formation of light-emiting material have been found: carbonization process should to be peformed in the duluted acetilene, at high temperature anf for short duration (to avoide the formation of graphite-like condensate). The effect of discharge power on the composition of silicon-carbon alloy films deposited by magnetron sputtering at fixed composition of working gas mixture hase been studied. Carbon incorporation was shown to decrease with increasing of discharge power. Incease of carbon incorporation corelates with decrease of density of the films and mechanical comprassive stresses. It was demonstrated that surface roughness corelates with density of the films. It is suggested that Si:C-Hn carbon bonds are mainly formed in the interface between mprphology growth peculiarities. Thechnology of the incorporation of terbium in silicon-carbon ally films has been developed. Series of samples of a-Si(1-x)C(x):H(:Tb) have been fabricated for futher fabrication of light-emitting a-SiC(x)С(y):H(:Tb) layers. Product Description popup.authors Васін Андрій Володимирович Назаров Олексій Миколайович Охолін Павло Миколайович Русавський Андрій Вадимович popup.nrat_date 2020-04-02 Close
R & D report
Head: Lysenko V.S.. Development of the nanotechnology of the fabrication of nanostructured carbonized silicon based materials and development of the light-emitting elements in broad range of wavelength.. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0212U006324
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Updated: 2026-03-24