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Information × Registration Number 0212U006325, 0110U004668 , R & D reports Title Development of the nanotechnology of the fabrication of nanostructured carbonized silicon based materials and development of the light-emitting elements in broad range of wavelength. popup.stage_title Head Lysenko V.S., Registration Date 20-03-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 It was found that oxidation of carbon-rich a-SixC1-x:H films in oxygen starts from formation of discrete nanoscale "corrosion" regions. The size and shape of these region are depended on growth morphology of the film. Mechanism of morphology transformation is depended on density of as-deposited layer. Basic research on the development of technological methods for fabrication of lightemitting materials on the base of Si:O:C alloys has been performed. The main mechanisms of interaction of porous silicon and nondiluted acetylene has been stidied. It has been found that acetilen should be deluted by inert gas for improvement of carbonization process. The effect of deposition conditions on structural properties of carbon-rich a-SixC1-x:H films. The effect of carbonization temperature (in range of 800-1000 0C), oxidation conditions (600-700 0С, humidity) on spectral characteristics of por-SiO2:C has been studied. It was shown that broad carbon related PL band is shifting to short wavelength with increasing of carbonization temperature Incorporation of carbon in porous silicon during thermal treatment in acetylene at short duration time was studied by Raman scattering. It has been shown that formation of graphitelike carbon clusters is startin from 800 0С. Product Description popup.authors Васін Андрій Володимирович Назаров Олексій Миколайович Охолін Павло Миколайович Русавський Андрій Вадимович popup.nrat_date 2020-04-02 Close