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Information × Registration Number 0212U006708, 0107U008578 , R & D reports Title Mechanism of formation and photoelectric properties of epitaxy heterosystems with localized states in Ge guantum dots popup.stage_title Head Kozyrev Yu.M., Registration Date 18-06-2012 Organization Institute of Surface Chemistry of the National Academy of Sciences of Ukraine popup.description2 Study of morphology and mechanisms of formation and structural characteristics of epitaxial heterosystems with vertically integrated Ge quantum dots on Si. The influence of matrix on the structural characteristics of the molar composition and the degree of elastic deformation of structures with quantum dots that are formed. The magnitude of the stress rupture zones heterojunction Si / Ge, which are determined by longitudinal photoconductivity spectra of multilayer heterostructures of SiGe at normal incidence and side lighting, set numerical relationship between structural and photoelectrical properties of these structures: between the values of elastic deformation? Xx and? Zz and average Ge content in nanoostrivtsyah. The influence of SiO2 matrix on the dynamics of processes occurring on the surface, the silicon epitaxy. First was obtained self-organized Si nanoclusters with signs monokrystalichnosti on amorphous SiO2 nanoplivtsi initially by molecular-beam epitaxy. Product Description popup.authors Дмитрук Н.В. Канєвський В.І. Козирев Ю.М. Рубежанська М.Ю. Скляр В.К. popup.nrat_date 2020-04-02 Close