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Information × Registration Number 0212U006878, 0111U009717 , R & D reports Title Fundamental researches of structure and physical properties of superconducting, magnetic and semi conducting materials with the special physical descriptions, perspective for application in atomic industry of Ukraine popup.stage_title Head Lavrinenko Sergij Dmitrievich, Finkel Vitaly Olexandrovich, Kutniy Volodymir Yevdokimocich, Registration Date 16-08-2012 Organization National Science Center "Kharkiv Institute of Physics and Technology popup.description2 In 2012, according to the thematic plan of the ministerial task of NAS of Ukraine to conduct scientific research in nuclear science and technology KIPT (subject III-1-11 (IFTTMT) "Fundamental studies of the structure and physical properties of superconducting, magnetic and semiconductor materials perspective to create new devices and systems of nuclear power, particularly for the transport, transformation and accumulation of nuclear power of Ukraine "conducted research for the next step: Step 3. study the properties of charge transfer in gamma-radiation from semiconductors under the influence of long-term exposure and study the effect of changes in transport properties of charge carriers at the spectrometric and dosimetric characteristics of the detectors. obtained the following main scientific results: 1. Experimental study on the impact capture of nonequilibrium charge to review CdZnTe detectors. found that the average contribution of fluctuations of the charge loss in the full width at napivvysoti for CdZnTe (CdTe) detectors in the energy region E> 60 keV is directly proportional to the average value generated charge is satisfactory precision recovery response functions provides the assumption that the trap ~ (G) 0,5? Ei /, where G - capture factor, Ei - energy gamma-quantum which was absorbed by the detector - the average energy of formation of electron-hole pairs. At the same time found that more accurate expression for the trap is. sufficiently large scatter rejection rate of the obtained values ??of 2 indicates that a more accurate simulation results response functions can be obtained by introducing additional model parameters that characterize the uneven distribution of defects in the volume CdZnTe detector. It also indicates that even in CdZnTe detectors dosimetric quality were investigated during this work, the influence of the distribution of defects in the volume of the detector not averaging based on common approaches used in modeling of detectors with Si and Ge. 2. Availability fotopikiv relatively low energy (<150 keV) is not a sufficient condition for life CdZnTe detectors for spectrometry in the energy range where the dominant Compton interaction of gamma quanta the material detector. 3. Simulation shows that the planar CdZnTe detector can provide a satisfactory amount of resolution (Agenda items of interest) on the line 661.67 keV provided that () e / () h <20. If () e / ( ) h> 60, then fotopik 661.67 keV (137Cs) can not be observed even at very low noise electronics. These criteria establish requirements for quality material is grown, (in this case CdZnTe). They can also be used in the selection of detectors that are suitable for gamma-ray spectrometry of high energy. a less severe form of this criterion holds true for gamma rays with energies in the range 100 ... 300 keV. This means that when () e / () h> 60 fotopik not yet fully degraded, but the CdZnTe (CdTe) detectors are not recommended for spectrometric studies. 4. Using the proposed criteria as received explanation of the experimental data obtained at different times for CdZnTe detectors. Page. - 29, Fig. - 23, Table. - 4 Lit. sources. - 22. Product Description popup.authors Аржавітін В.М. Богдан Є.О. Вєрьовкін А.А. Дерев'янко В.В. Мухин В.В. Наконечний Д.В. Піроженко Л.О. Рибка Олександр Вікторович Серих Л.М. Соколов С.О. Сунеуров М.С. Сухарева Т.В. Тихоновська Т.М. Чечина М.В. Шахов Ю.Н. popup.nrat_date 2020-04-02 Close