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Information × Registration Number 0212U007059, 0111U007115 , R & D reports Title Investigation of electronic, mixed plasmon-phonon modes and structural peculiarities in nitride nanostructures in nonequilibrium conditions popup.stage_title Head Naumov A.V., Registration Date 25-04-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Object of studies: nitride diode structures based on n+-n0-n+-GaN. The aim of the work: investigation of physical mechanisms of electron transport in nitride heterostructures by confocal Raman spectroscopy. The local spatial distribution of structural, optical and electron properties of GaN diode structures grown on (0001) sapphire substrate was investigated. Main regularities of deformations distribution, structural perfection and concentration of free charge carriers along growth direction of GaN diode structures were studied for the first time. After first stage two journal articles (Journal of Applied Physics, Physica Status Solidi (C)) were published and the results of work were reported at 22nd European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides "Diamond 2011", Garmisch-Partenkirchen (Germany). Product Description popup.authors Авраменко К.А. Коломис О.Ф. Сафрюк Н.В. popup.nrat_date 2020-04-02 Close