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Information × Registration Number 0212U007288, 0110U006027 , R & D reports Title Investigation of plasmon-phonon vibrations in semiconductor nanostructures under high electric currents popup.stage_title Head Belyaev Alexandr, Доктор фізико-математичних наук Registration Date 02-11-2012 Organization V.Lashkaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 Dispersion equations that describe consisted collective oscillations of electrons and optical phonons were obtained and investigated. Collective interaction of carriers with optical vibrations of the crystal lattice leads to a restructuring of the dispersion curves in the residual radiation and depends on the dimensions of the system. It is shown that there is a strong dependence of the parameters of heterosystems Al0.30Ga0.70N/GaN on initial deformation state of the template / buffer system (ie type template). Deformation fields significantly affect the growth rate and relaxation mechanisms of subsequent layers of GaN and AlN during growth. Structural perfection superlattice also strongly depends on the initial deformation of the template / buffer system. These results can be used to develop high-quality devices. Product Description popup.authors Індутний І.З. Валах М.Я. Венгер Є.Ф. Кладько В.П. Конакова Р.В. Кочелап В.О. Стрельчук В.В. popup.nrat_date 2020-04-02 Close
R & D report
Head: Belyaev Alexandr. Investigation of plasmon-phonon vibrations in semiconductor nanostructures under high electric currents. (popup.stage: ). V.Lashkaryov Institute of Semiconductor Physics NAS of Ukraine. № 0212U007288
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Updated: 2026-03-22