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Information × Registration Number 0212U007469, 0112U004050 , R & D reports Title Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers popup.stage_title Head Konakova Raisa Vasil'evna, Registration Date 01-02-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 It is found that ohmic contact on the basis of contact creating layer of the thin film package Au+Ge to n-n+-n++InP structures creates by the of solid-phase reactions mechanism using RTA 400-500°C. It is shown that as the result of RTA in the InP contact interface due to mass transfer appears germanium thin heavily doped n+ layer of InP. Specific contact resistance increasing mechanism of ohmic contacts to InP Gunn diodes with step doped n+-n type interface InP is theoretically and experimentally verified . Design documentation for Gunn diodes case for the frequency range 90-118 GHz is developed Product Description popup.authors А.В.Саченко В.В.Мілєнін В.М.Шеремет Р.В.Конакова С.В.Новицький Я.Я.Кудрик popup.nrat_date 2020-04-02 Close