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Information × Registration Number 0212U007470, 0112U004052 , R & D reports Title Development of methods for production of THz microwave emission sources based on III V semiconductor structures with nanostructure buffer layers and structured diffusion barriers. popup.stage_title Head Sheremet Volodymyr Mykolaiovych, Registration Date 28-12-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 New contact systems Pd-Ti-Pd-Au and Ti-Pd-TiB2-Au to the n+ GaN layers are investigated. Contact system Pd-Ti-Pd-Au provides a contact resistance 2·10^-6 Ohm?cm^2, which does not changed in the temperatures range of 200-350 К. Researched Pd-Ti-Pd-Au, Ti-Pd-Au, Ti-Pd-TiB2-Au ohmic contacts to the epilayers of n+-GaN are made by different methods. On these contact dependences of rc(T) there are areas of exponential decreasing of rc, and areas of very weak dependence of rc(T) at higher temperatures. In a low temperature area for the contact of Au-Pd-Ti-Pd-n-GaN, there is an area of rc(T) saturation. This area appears only after the rapid thermal annealing. Active element chip construction is investigated. It is made with the use of researched contact systems on the basis of epitaxial structure of n+-n-n+ type GaN, that is grown on the highly doped 4HSiC layer with defense of small diameter mesa (~25 мкм) by an insulating area, formed in the layer of GaN by the of ionic implantation method of helium ions. Researches of model sample of n+-n-n+ GaN structures of small diameter showed possibilityof active microelements on their basis construction. Product Description popup.authors Кладько Василь Петрович Конакова Раїса Ваислівна Кудрик Ярослав Ярославович Саченко Анатолій Васильович Шеремет Володимир Миколайович popup.nrat_date 2020-04-02 Close