Search academic texts

Information × Registration Number 0212U007797, 0111U001319 , R & D reports Title The creation of the design and manufacture of integrated circuits ferroelectric memory popup.stage_title Head Martyniuk Iakiv, Registration Date 28-12-2012 Organization National Technical University of Ukraine "KPI" popup.description2 The new technology of deposition of nanoscale (20-50 nm) ferroelectric films (NFF) for the non-volatile memory elements (ME), including the method of RF magnetron sputtering with closed drift of high-energy secondary electrons. Processed using the method and means of RF sputtering plazma monolithic ceramic targets based compounds zirconium, titanium, lead in the direction of reducing the thickness of the film, the technology of ultrasound treatment NFF, which provides an increase in the polarization reorientation and reduction of stress reversal. A new computer model of ME on the NFF, which implements a step-by-step integration of transients as a superposition of a large number of switching processes of the ferroelectric dipoles and calculates the total result of the current, voltage and charge polarization under the influence of ME pulse recording, reading and interference. The values of the ME parameters necessary for the design of memory devices and integrated circuits in SPICE. Made to scale-model ME on NFF with improved options and performance Product Description popup.authors Божко А.П. Верба О.А. Геращенко Д.В. Грищенко О.М. Зюзя О.А. Клето Г.І. Корабльов Г.Ф. Марковський О.П. Мартинюк О.Я. Скороход І.О. Юрчишин В.Я. popup.nrat_date 2020-04-02 Close