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Information × Registration Number 0212U008106, 0112U004599 , R & D reports Title Influence of microwave annealing on the process of diffusion, formation and reformation of defect structures in semiconductor and ceramic matherials popup.stage_title Head Belyaev А.E., Доктор фізико-математичних наук Registration Date 19-04-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 This work devoted influence of microwave irradiation on masstransfer in multilayered spatially inhomogenous device structures. Me-InP(GaAs, GaN, Si), in composite matherials TiB2-TiC-C and TiB2-B4C-C. Physical model of influence microwave irradiation on parameters of semiconductor structures proposed by us allow describe and prognose results of microwave treatment of device structures, wich results to directed masstransfer and, as result, to optimization of structure parameters. Product Description popup.authors Бєляєв О.Є. Виноградов А.О. Конакова Р.В. Кудрик Я.Я. Мілєнін Новицький С.В. Редько Р.А. Саченко А.В. Шеремет В.М. Шинкаренко В.В. popup.nrat_date 2020-04-02 Close
R & D report
Influence of microwave annealing on the process of diffusion, formation and reformation of defect structures in semiconductor and ceramic matherials
Head: Belyaev А.E.. Influence of microwave annealing on the process of diffusion, formation and reformation of defect structures in semiconductor and ceramic matherials. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0212U008106
1 documents found

Updated: 2026-03-26


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