Registration Number
0212U008106,
0112U004599
, R & D reports
Title
Influence of microwave annealing on the process of diffusion, formation and reformation of defect structures in semiconductor and ceramic matherials
popup.stage_title
Head
Belyaev А.E., Доктор фізико-математичних наук
Registration Date
19-04-2013
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
popup.description2
This work devoted influence of microwave irradiation on masstransfer in multilayered spatially inhomogenous device structures. Me-InP(GaAs, GaN, Si), in composite matherials TiB2-TiC-C and TiB2-B4C-C. Physical model of influence microwave irradiation on parameters of semiconductor structures proposed by us allow describe and prognose results of microwave treatment of device structures, wich results to directed masstransfer and, as result, to optimization of structure parameters.
Product Description
popup.authors
Бєляєв О.Є.
Виноградов А.О.
Конакова Р.В.
Кудрик Я.Я.
Мілєнін
Новицький С.В.
Редько Р.А.
Саченко А.В.
Шеремет В.М.
Шинкаренко В.В.
popup.nrat_date
2020-04-02
