Search academic texts

Information × Registration Number 0212U008254, 0112U003693 , R & D reports Title Technology, Spectral properties and termoэlektrycheskye mnohosloynыh lovdimention heterostructures based on lead halkohenydov popup.stage_title Head Freik Dmytro Myhaylovych, Registration Date 07-12-2012 Organization Vasil Stefanyk Precarpathian University popup.description2 Stanum Telluride, along with PbTe, is a promising thermoelectric material with stable p-type conductivity and has high carrier concentration. Increased interest in these compounds caused the theoretical prediction and experimental confirmation of the possibility of a significant increase in the thermoelectric figure of merit in thin films and quantum-dimensional structures by allowing independent technological factors influence the process of growing on the electrical parameters. In the paper has presented results of the formation process, surface topology thin voles and stanum telluride nanostructures was obtained vapor phase methods. It was studies features of carriers scattering mechanisms in thin films of SnTe, deposited on substrates with nylon tape. It was shown the absorption spectra of SnTe nanostructures for infrared light spectrum. It was shown that if the thickness dependence of the electrical conductivity, Seebeck coefficient and thermoelectric power of thin films of SnTe there are classical size effects associated with the diffuse carriers scattering at the surface and the grain boundaries, in nanostructures - oscillation due to quantization of the spectrum energy carriers in quantum wells formed barriers at the boundaries of the substrate and surface structures. The microscopic study of the mechanisms of growth of heterostructures PbTe / SnTe / PbTe was done end obtained by thermal evaporation in vacuum on substrates KCl. It was established that the structure of PbTe / SnTe / PbTe is growing layer by layer and it was form a mismatch dislocations at the interface at the critical thickness of 2 nm. Experimentally determined dependence of elastic stresses in the growing layer (PbTe or SnTe) the thickness of the layer are in good agreement with the calculated theoretically. Thickness dependence of thermoelectric properties were interpreted in the framework of a three-layer model, considering heterostructures PbTe / SnTe / PbTe, as three conductors are connected in parallel, each of which is characterized by its electrophysical parameter. Product Description popup.authors Балан Володимир Юрієвич Возняк Оорест Михайлович Горічок Ігор Володимирович Дзумедзей Роман Олексійович Дундза Богдан Степанович Потяк Володимир Юрієвич Цимбрикевич Йосип Костянтинович Юрчишин Іігор Костянтинович Яворський Ярослав Святославович popup.nrat_date 2020-04-02 Close