1 documents found
Information × Registration Number 0212U009036, 0112U004194 , R & D reports Title Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices. popup.stage_title Head Venger Evgeni Fedorovych, Registration Date 26-12-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Physical and technological investigation of intrinsic stresses, electrical properties, compositional and morphological nano-inhomogeneities, and grows mechanisms of nano-thin Ge films on GaAs depending on deposition rate and thickness of nano-thin films, as well as development of technology of metal contact system formation to nano-layer of Ge. Product Description popup.authors Венгер Євген Федорович Забродська Олена Сергіївна Мітін Вадим федорович Мітін Валентин Вадимович Матвеєва Людмила Олександрівна Неміш Іван Юрійович Холевчук Володимир Васильович popup.nrat_date 2020-04-02 Close
R & D report
Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices.
Head: Venger Evgeni Fedorovych. Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices.. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0212U009036
1 documents found

Updated: 2026-03-24


Роздрукувати цю сторінку