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Information × Registration Number 0213U000127, 0110U006080 , R & D reports Title Development of optoelectronic devices on multilayer epitaxial nanustructures based on SiGe, their oxides and rare earth elements popup.stage_title Head Kozyrev Yu.M., Registration Date 17-01-2013 Organization Institute of Surface Chemistry of the National Academy of Sciences of Ukraine popup.description2 Experimentally shown in the leading atomic force microscopy of isolated quantum dot Ge, which, in accordance with previously proven distribution of elastic deformation, the maximum density of surface states located in the lateral loop quantum dot and linearly depends on the diameter of the path. Offset voltage cut-off current-voltage characteristics with the type of conductivity and confirms tunnel-activation mechanism of charge transfer in such systems. Developed and obtained 2D-and 3D-dimensional structure with isovalent impurity Er in nanoutvorennyah Ge on Si and Ge on SiOh and investigated luminescent properties of such systems. Product Description popup.authors Канєвський В.І. Козирев Юрій Миколайович Рубежанська М.Ю. Скляр В.К. popup.nrat_date 2020-04-02 Close
R & D report
Development of optoelectronic devices on multilayer epitaxial nanustructures based on SiGe, their oxides and rare earth elements
Head: Kozyrev Yu.M.. Development of optoelectronic devices on multilayer epitaxial nanustructures based on SiGe, their oxides and rare earth elements. (popup.stage: ). Institute of Surface Chemistry of the National Academy of Sciences of Ukraine. № 0213U000127
1 documents found

Updated: 2026-03-26


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