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Information × Registration Number 0213U000128, 0110U006080 , R & D reports Title Development of optoelectronic devices on multilayer epitaxial nanustructures based on SiGe, their oxides and rare earth elements popup.stage_title Head Kozyrev Yu.M., Registration Date 17-01-2013 Organization O.O. Chuiko Institute of Surface Chemistry of the National Academy of Sciences of Ukraine popup.description2 The method of epitaxial growth of single-layer and multilayer heterostructures Ge / Si quantum dots with Ge. Using the method of intermediate layers allowed to receive system nanoclusters with more uniform distribution over the surface of the substrate that Dr. assume quantum dots vertically integrated in different layers. Studies of longitudinal photoconductivity and photovoltage heterostructure Si / Ge from SiGe nanoislands revealed the presence of localized states in the valence band of Ge nanoislands energy distances between about 0.32 and 0.34 eV. Furthermore, longitudinal photocurrent is determined by the nature of transport of nonequilibrium charge carriers, and hence the properties function of supply. Vnutrishnozonni transitions between localized states in the valence band nanoislands Ge, in our opinion, are responsible for the longitudinal photoconductivity and fotopolovu emission observed in the middle infrared region in heterostructures Si / Ge quantum dots with Ge. Product Description popup.authors Козирев Юрій Миколайович Рубежанська М.Ю. Скляр В.К. popup.nrat_date 2020-04-02 Close