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Information × Registration Number 0213U000129, 0110U006080 , R & D reports Title Development of optoelectronic devices on multilayer epitaxial nanustructures based on SiGe, their oxides and rare earth elements popup.stage_title Head Kozyrev Yu.M., Registration Date 17-01-2013 Organization Institute of Surface Chemistry of the National Academy of Sciences of Ukraine popup.description2 To explain the effect of residual conductivity and optical quenching conductivity heterosystems Ge-NK/SiO2/Si involved model that provides optical recharge conditions nanoislands and interfaces Ge/SiO2 and SiO2/Si, and its impact on the value of surface conductivity in the substrate p-Si. Thus, the state with high (compared to equilibrium) conductivity induced by reducing the surface bending zones in the band-band excitation in p-Si, caused by the effect of the field with decreasing positive charge, trapped structures. It is shown that the excitation photons with energy 0.6 - 1.0 eV transition Heterosystem in long-term equilibrium states with the largest conductivity below the equilibrium caused by the spatial separation of photoexcited Ge nanoclusters in electronic dirovyh couples when nonequilibrium holes admired states nanoclusters and their interface, thereby increasing the surface area of depletion zones bending the substrate p-Si and thus decreasing the surface conductivity. Product Description popup.authors Козирев Юрій Миколайович Рубежанська М.Ю. Скляр В.К. popup.nrat_date 2020-04-02 Close