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Information × Registration Number 0213U000163, 0110U004655 , R & D reports Title Development and progress of method of submicron topography and passport systems of chemical composition, structural perfection, electrophysics parameters and strain distributing in the nanostructures of electronics and optoelectronics. popup.stage_title Head Strelchuk Viktor Vasylyovych, Доктор фізико-математичних наук Registration Date 18-01-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Apparatus and diagnostic methods of high-resolution scanning confocal Raman and luminescence spectroscopy were developed and improved. The spatial distribution of elastic strains in silicon nanowires grown by gold enhanced chemical vapor deposition on boron-doped Si(100) and Si(111) substrates was studied. No-uniform distribution of elastic strains is shown both in the nanowires and the substrate, which leads to a change in their structure and origin of the hexagonal phase inclusions in the interface region. Magnetic-force microscopy is used to show doped Zn1-xСoxO films to be ferromagnetic at room temperature, which is explained by the indirect exchange interaction as isolated ions Co2+ and Co2+ ions in the cluster (Co-O-Co)n (n 1) configurations. The basic peculiarities of manifestation of Zn2+ substitution by transition metal cations CO2+ in ZnO matrix in the PL and Raman spectra are clarified. Micro-Raman spectroscopy is used to study electron-phonon resonances in single-layer graphene. Appearance and sharp intensity increase of D-like bands of the Brillouin zone edge, induced by structural defects generation in the graphene layer, is registered with increase of power of exciting radiation. The phonon dispersion of single-layer graphene is investigated near the K-point of Brillouine zone in K-M direction. Spatial distribution of the crystalline perfection, elastic strains and structural phases in the near-surface layers of solar cells crystalline silicon materials are studied. Investigated structures are shown to contain disordered sub-surface layers, with gradual crystal perfection decrease and increase of residual tensile strains near their surface. Non-uniform distribution of silicon crystalline phases in the sub-surface region of the investigated structures with local inclusions of mixed amorphous and nanocrystalline phases is found. Product Description popup.authors Авраменко Катерина Андріївна Губанов Віктор Олександрович Коломис Олександр Федорович Ніколенко Андрій Сергійович Насєка Юрій Миколайович Романюк Артем Сергійович popup.nrat_date 2020-04-02 Close