Search academic texts

Information × Registration Number 0213U000508, 0110U006232 , R & D reports Title Investigation of ultra-high-frequency properties of semiconductor nanostructures with real-space-transfer of hot carriers which provide appearance of the negative differential conductivity (NDC), and amplification (generation) of electromagnetic radiation. popup.stage_title Head Poroshin Volodymyr Mykolayovich, Registration Date 13-02-2013 Organization Institute of physics NASU popup.description2 The models to analyze effects of real-space-transfer of charge carriers in delta-doped heterostructures with quantum wells due to the influence of electric field in the cases of moderately and heavily doped barriers have been developed. It is shown that with moderate doping the real-space-transfer of hot carriers leads only to current saturation, while with strong doping it results in falling current-voltage characteristics (negative differential conductivity). The energy parameters of centers formed in the AlGaAs epitaxial layers with different composition of aluminum (0.15-0.3) and doped by silicon atoms have been found. It is found that deep centers appear when aluminum content is close to 30%. For these structures the nonlinear current-voltage characteristics have been observed which are explained by a decrease of the charge carrier concentration in quantum wells due to capture of them on deep centers in the barriers in the course of carriers heating by electric field. Product Description popup.authors Біличенко Ярослав Григорович Більовський Павло Антонович Вайнберг Віктор Володимирович Васецький Віктор Михайлович Винославський Михайло Миколайович Коротєєв Вадим В'ячеславович Кочелап В'ячеслав Олександрович Кочелап В'ячеслав Олександрович. Пилипчук Олександр Сергійович Порошин Володимир Миколайович Райчев Олег Едуардович popup.nrat_date 2020-04-02 Close