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Information × Registration Number 0213U000610, 0112U003395 , R & D reports Title The development of plasma nanotechnology of the nanostructured aluminium and boron nitrides layers deposition for microwave devices surface protection popup.stage_title Head Zayats Mykola Sergiyovich, Registration Date 26-02-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 As a result of the III-th stage of the project carried out optimization of process parameters of low-temperature ion-plasma formation of nanostructured hexagonal BN and AlN layers by magnetron sputtering relevant targets on silicon and quartz substrates without submitting them to potential bias (a floating potential). Elaborated and process methods express optical monitoring patterns of deposition of films BN and AlN with the necessary structural, optical and electrical properties and studies of experimental models for their practical use in dashboards thin film structures electronics, optoelectronics and sensing. Product Description popup.authors В.Б. Лозінський В.Г. Бойко М.І. Клюй М.С. Заяць popup.nrat_date 2020-04-02 Close
R & D report
Head: Zayats Mykola Sergiyovich. The development of plasma nanotechnology of the nanostructured aluminium and boron nitrides layers deposition for microwave devices surface protection. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0213U000610
1 documents found

Updated: 2026-03-26