Registration Number
0213U000744,
0110U000143
, R & D reports
Title
Photoelectronics materials based on doped Zinc oxide films
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Head
Lashkarev Geogiy Vadimovich, Доктор фізико-математичних наук
Registration Date
15-03-2013
Organization
Frantzevich Insitute for Materials Science Problems of the Ukranian National Academy of Sciences
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The influence of the physical nature of nitrogen and cadmium impurities on the structure, electron, phonon and radiative spectra of zinc oxide films were investigated, as well as do the electrical and photovoltaic properties of light emittion diodes and photodetectors created on deposited films. Heterostructures n-Zn1-xCdxO/p-SiC with good rectification behavior and diode characteristics were developed. It was found that the electrical characteristics (turn-on voltage, the rectification factor and the series resistance of the diode) of the obtained heterostructures can be adjust by changing the concentration of the acceptor impurity in the p-SiC layers. It was first revealed that significant increasing in photosensitivity and response time of ZnO-based photodetectors was achieved by introduction of nitrogen into zinc oxide lattice. Ni/ZnO:N/p-Si phototransistor structures was developed in which the mechanism of internal amplification for photocurrent was implemented, as a result the significant photosensitivity 210 A/W and high performance with temporal constant 100 ns were achieved.
Product Description
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Євтушенко Арсеній Іванович
Асоцький Валерій Володимирович
Бугайова Марина Едуардівна
Демидюк Павло Вікторович
Дмитрiєв Олександр Ілліч
Карпина Віталій Анатолійович
Лазоренко Василь Йосипович
Османов Темраз Шамсутдінович
Петросян Лариса Ігорівна
Позняк Іван Іванович
Радченко Михайло Васильович
Січковський Віталій Іванович
Трушкін Сергій Валерійович
Федорченко Дмиро Альфредович
Харечко М.О.
Храновський Володимир Дмитрович
Штеплюк Іван Іванович
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2020-04-02
