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Information × Registration Number 0213U000905, 0108U004561 , R & D reports Title Development and creation of instruments for express control of material parameters for detectors of ionized radiation popup.stage_title Head Glinchuk Konstantin, Strilchuk Oksana, Registration Date 12-04-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The project objective is to develop a physical basis of the method of luminescence rapid diagnosis and projections of materials, looking to create semiconductor detectors of nuclear radiation. Using this technique, a complex of quality control and uniformity of materials for detectors of ionizing radiation was created. The objects of rapid diagnostic tests were materials CdTe, ternary compounds CdZnTe, doped with different impurities. Theoretically grounded physical basis of the method of luminescence diagnostics of semiconductor materials used to manufacture the ionizing radiation detectors. The analytical expressions for the intensities of the low-temperature (T = 4.2 K, 77 K, 300 K) edge of the luminescence bands, which are an indicator of the quality of the material were found, and main criteria to determine the suitability of crystals Cd1-хZnхTe for manufacturing detectors were designated. There is a direct correlation between the low-temperature photoluminescence spectra of doped and undoped crystals and energy resolution of CdZnTe nuclear radiation detectors made from these crystals. The method for determining the composition of the ternary compounds Cd1-хZnхTe on the basis of the correlations between the position of the maximum of the exciton band luminescence of Cd1-хZnхTe and local zinc concentration x in them. Set errors in determining the actual value of x ternary compounds Cd1-хZnхTe at different temperatures measurements ( 6 - 8%, 3-8% and 10-20% for 4.2, 77 and 300 K, respectively). The optimum concentration of the dopant In (NIn = 1017cm-3) crystals Cd0.9Zn0.1Te, used for the manufacture of detectors with high spectrometric characteristics. The practical significance of the project is the ability to estimate the quality and selection of material, predicting its properties, which simplifies the process of creating detectors and increases the yield of high-quality devices. The results of research can be used in the following areas: electronics, environment, science, and medicine. Product Description popup.authors Воробкало Ф.М. ГлинчукК.Д. Литовченко Н.М. Ляпін О.М. Насєка Ю.М. Стрільчук О.М. popup.nrat_date 2020-04-02 Close
R & D report
Head: Glinchuk Konstantin, Strilchuk Oksana. Development and creation of instruments for express control of material parameters for detectors of ionized radiation. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0213U000905
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Updated: 2026-03-26