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Information × Registration Number 0213U001390, 0110U006270 , R & D reports Title Research and development of ion-plasma technologies for formation of silicon composites at introduction of stimulating self-organization processes impurites. popup.stage_title Head Evtukh Anatoli Antonovych, Registration Date 31-01-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Report is submitted in one volume and has 30 pages, including figures 6, table 1, used sources 32. Keywords: nanocrystals, technology, ion-plasma sputtering, structure, infrared spectroscopy, electrical properties, I-V characteristics, MIS structures. The purpose of the project (phase): To investigate the influence of nitrogen additions during ion-plasma sputtering on physical properties of oxynitride films and processes of controlled self-organized growth of silicon nanocrystals in the dielectric matrix. The peaks in the IR spectra in the frequency range ща 700-800 cm-1 caused by the presence of nitrogen in oxynitride films have been revealed. The ratio of working gases influences on the provisions of the peak caused by Si-N vibrations. There is a shift of the maximum bandwidth associated with Si-N vibrations to shorter wavelengths with decreasing of O2/N2.gas ratio. Moreover, the position of the maximum bandwidth associated with Si-O bonds remained stable. That is associated with a constant content of oxygen which is fed into the reaction chamber. It was found that annealing at Т=4000 С for 30 min. in a nitrogen atmosphere leads to a redistribution of the intensities of bands of the elementary Gaussian shape in the original SiOxNy films. It was found that for samples with a lower ratio of working gas O2/N2 the conductivity is greater. The film that contains more nitrogen atoms better conducts the current. It is shown that after annealing the conductivity through the film decreased. This phenomenon explains the process of structuring and annealing of the defects in the films. It was found that electrical conductivity of oxynitride films is realized by the mechanism of hopping conductivity with variable hopping length through the traps near the Fermi level (Mott mechanism). Product Description popup.authors Євтух Анатолій Антонович Братусь Олег леонідович Лісовський Ігор Петрович Литовченко Володимир Григорович popup.nrat_date 2020-04-02 Close