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Information × Registration Number 0213U001663, 0111U006452 , R & D reports Title Development of physico-technological basis for manufacturing of components A3N nanoelectronics devices for optoelectronics and microwave technique popup.stage_title Head Belyaev Alexandr, Доктор фізико-математичних наук Registration Date 21-01-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 3.Deformation state of active superlattice (SL) and their separate layers, strain relaxation degree as well as period, layers' thickness and AlxGa1?xN solid alloy composition have been determined. It is shown that growth velocity of the layers depends considerably on deformation state of the system - under increasing of strains the growth velocity is increased. As a result structural and optic properties are determined by processes of inelastic relaxation of strains that cause changes of well and barrier thicknesses. Product Description popup.authors Кладько Василь Петрович Конакова Раїса Василівна Кочелап Вячеслав Олександрович popup.nrat_date 2020-04-02 Close
R & D report
Development of physico-technological basis for manufacturing of components A3N nanoelectronics devices for optoelectronics and microwave technique
Head: Belyaev Alexandr. Development of physico-technological basis for manufacturing of components A3N nanoelectronics devices for optoelectronics and microwave technique. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0213U001663
1 documents found

Updated: 2026-03-16


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