Search academic texts

Information × Registration Number 0213U001704, 0112U005136 , R & D reports Title Technology and physical properties of graphene and graphene-like structures popup.stage_title Head Striha M.V., Registration Date 24-01-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 A quantitative model is proposed to explain the anti-hysteresis behavior in graphene on Pb(ZrxTi1-x)O3 ferroelectric substrate resistance on gate voltage sweep. The model takes into consideration a screening of electric field in the substrate by electrons, captured by the states, connected with graphene-ferroelectric interface, and it explains experimental data obtained previously. The experimental characterization of dispersion of electron-phonon resonances in one-and multilayer grapheme was made using Raman spectroscopy. At low excitation powers, the absence of D peak in the Raman spectra excludes large amounts of structural defects. It was found, that Raman modes corresponding to inelastic scattering on zone-edge phonons caused by introduction of structural defects and deformations in the graphene layer appears and undergo rise in the Raman spectra at excitation power > 4 mW. Product Description popup.authors Алєйнікова А.Б. Бєляєв О.Є. Кисельов В.С. Кочелап В.О. Ніколенко А.С. Наумов А.В. Райчев О.Е. popup.nrat_date 2020-04-02 Close