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Information × Registration Number 0213U002171, 0112U005294 , R & D reports Title Optimization of organic field-effect transistors. popup.stage_title Head Kadashchuk Andrey Konstantinovich, Registration Date 16-01-2013 Organization Institute of physics NASU popup.description2 The aim of the research project was the comprehensive study of the effect of longitudinal electric field and mechanical strain on the charge transport in channel of field effect transistor (OFET) fabricated on the base of thin polycrystalline film of organic semiconductor material. For the first time it was found experimentally the field dependence of mobility within the range of weak lateral fields for pentacene-based OFETs. By means of in situ method, namely via tunnel microscopy, it was exhibited directly that such a behaviour of mobility was caused by great difference in local conductance inside the crystallites and between their boundaries, that gave rise to redistribution of injected charge and to appearance of strong local fields on the boundaries of crystal grains. Using the effective medium approach the new analytical model was developed and approved, which allows to simulate quantitatively accurate the dependence of charge transport characteristics from lateral electric field in channel of the OFET based on polycrystalline material. It was also first revealed and investigated the effect of compressive and tensile strain on the charge transfer efficiency in the channel of OFET on the base of polycrystalline film of n-type semiconductor material fullerene C60 which was grown by epitaxy on the flexible dielectric substrate. The volt-ampere characteristics of such OFET as well as calculated electron mobility were ascertained to vary within the wide range depending on the direction and sign of strain with respect to the current flow. At that the maximal relative changes in mobility under the deformations were almost one order of magnitude higher in comparison with the analogous data for the OFET on the base of pentacene with p-type conductivity. The theoretical analysis within the extended model of charge hopping transport in disordered materials showed that the discovered effect and its anisotropy were caused mostly by the change in efficiency of carriers tunneling through the inter-grain barriers in C60 film owing to their distortion as a result of crystallites' mutual closing in and moving off. Product Description popup.authors Вахнін Олександр Юрійович Кадащук Андрій Костянтинович Фіщук Іван Іванович popup.nrat_date 2020-04-02 Close