Search academic texts

Information × Registration Number 0213U004499, 0113U003230 , R & D reports Title Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices popup.stage_title Head Puzikov Vyacheslav Mikhailovich, Registration Date 23-12-2013 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 The conditions of the formation of heteropolytype nanocrystalline SiC films were established. The volt-ampere and photoelectric characteristics of n-SiC/n-Si heterostructure were studied. Investigated were the conditions for the increase of the dielectric properties of protective nanocrystalline silicon carbide films. Introduction of nitrogen in amounts up to 2 at.% into the film in the process of its formation was found to reduce the electriclal conductivity by 2 orders. The I-V and photoelectric of mesa-structures of silicon SHF p-i-n diodes with protective coating were studied. Product Description popup.authors Лопін Олександр Володимирович Семенов Олександр Володимирович popup.nrat_date 2020-04-02 Close