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Information × Registration Number 0213U004828, 0113U005001 , R & D reports Title Development of methods for production of THz microwave emission sources based on III V semiconductor structures with nanostructure buffer layers and structured diffusion barriers. popup.stage_title Head Sheremet Volodymyr Mykolaiovych, Registration Date 27-12-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The new base technology of n+-n-n+ type systems active elements chip development on the base of GaN epitaxial layer grown on highly doped substrate were worked out. Technology of producing such chips was researched. Complex research of Pd-Ti-Pd-Au, Ti-Pd-Au, Ti-Pd-TiB2-Au ohmic contacts to the epitaxial layers of n+-GaN rc(T) were conducted. On dependences of rc(T) there are areas of exponential decreasing of rc, and at higher temperatures there are areas of very weak dependence of rc(T). In addition, there is an area of saturation of rc(T) in a low temperature area for the contact of Au-Pd-Ti-Pd-n-GaN. Technology of active element chip construction on the basis of epitaxial structure of GaN n+-n-n+ type on the high doped substrate 4HSiC with mesa defence of small diameter (~25 mkm) with insulating area (r~10^10 Ом см), formed in the layer of GaN by ion implantation (Е~2,5 MeV) of helium method. Product Description popup.authors Конакова Раїса Ваислівна Кудрик Ярослав Ярославович Саченко Анатолій Васильович Шеремет Володимир Миколайович popup.nrat_date 2020-04-02 Close