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Information × Registration Number 0213U004829, 0113U005002 , R & D reports Title Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers popup.stage_title Head Konakova Raisa Vasil'evna, Registration Date 27-12-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Technique of ohmic contact creation to InP and GaAs with the step of alloying was proposed. It is protected by the Ukraine patent №83644 (bulletin №18, 25.09.2013) during project implementation. Technique of quality estimation and Gunn diodes chip are proposed and realized in an experiment. The base technological route of Gunn diodes chip production is worked out. The mechanism of current flow in the temperatures range of 4,2-300 К in ohmic contacts to n-InP and n-GaAs is theoretically confirmed with limitation of electron current limitation by diffusion supply and low temperature freezing of electrons. In the interface area of n-InP is experimentally detected high dislocation density of ~2,2-10^-4 см^-1. Product Description popup.authors А.В.Саченко В.В.Мілєнін В.М.Шеремет Р.В.Конакова С.В.Новицький Я.Я.Кудрик popup.nrat_date 2020-04-02 Close