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Information × Registration Number 0213U005113, 0111U001005 , R & D reports Title Low-temperature obtaining of silicon carbide films with preset properties meant for electronics and optoelectronics popup.stage_title Head Semenov Aleksandr Vladimirovich, Registration Date 11-03-2013 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 Studied are the electrophysical properties of 21R-SiC nanocrystalline films with 10-15 nm nanocrystals on silicon carbide substrates, as well as heterotransition between nanocrystalline silicon carbide and silicon with electronic conduction. It is established that the initial stage of the growth of nc-SiC fielms under the condiions of direct ion deposition is characterized by uncontrolled changes of the surface temperature with all the technological parameters remaining unchanged. Product Description popup.authors Лопін Олександр Володимирович Пузіков Вячеслав Михайлович popup.nrat_date 2020-04-02 Close