1 documents found
Information × Registration Number 0213U005116, 0108U004820 , R & D reports Title Development of basically new materials, including nano-materials components formicroelectronic devices, which implies work-out ofthetechnology fortheobtaining of new semiconductor materials based on quantum points of chalcogenides for creation of emitters of visible and near-UV light (500- 1400nm) with controlled emission spectrum. Production of experimentalsamples of light diodes; development of the technology for obtaining nano-ceramics on the base of heavy oxides of rare-earth metals for ionizing radiation registration..Development of the technological regulations for nano-ceramics preparation. Production of experimental series of scintillation elements for X-ray and gamma-quants registration; development of the technology for mfking high- quality sapphire substrates for "silicon-on-sabhire" structures, light diodes and other components of microelectronic devices.Creation of pilot production ares and manufacture of substrates from the crystals grows by different methods meant for large integrate popup.stage_title Head Tolmachov Aleksandr Vladimirovich, Registration Date 11-03-2013 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 The technologies of fabrication and development types .new semiconductor materials on chalcogenide quantum dots base, scintillation nanoceramics on rare-earth metals base, sapphire substrates for epitaxy of A3B5 semiconductors, ion-plasma deposited SiC thin film structures was created Product Description popup.authors Саввін Юрій Миколаєвич Явецький Роман Павлович popup.nrat_date 2020-04-02 Close
R & D report
Head: Tolmachov Aleksandr Vladimirovich. Development of basically new materials, including nano-materials components formicroelectronic devices, which implies work-out ofthetechnology fortheobtaining of new semiconductor materials based on quantum points of chalcogenides for creation of emitters of visible and near-UV light (500- 1400nm) with controlled emission spectrum. Production of experimentalsamples of light diodes; development of the technology for obtaining nano-ceramics on the base of heavy oxides of rare-earth metals for ionizing radiation registration..Development of the technological regulations for nano-ceramics preparation. Production of experimental series of scintillation elements for X-ray and gamma-quants registration; development of the technology for mfking high- quality sapphire substrates for "silicon-on-sabhire" structures, light diodes and other components of microelectronic devices.Creation of pilot production ares and manufacture of substrates from the crystals grows by different methods meant for large integrate. (popup.stage: ). Institute for Single Crystals National Academy of Sciences of Ukraine. № 0213U005116
1 documents found

Updated: 2026-03-21