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Information × Registration Number 0213U005785, 0111U006176 , R & D reports Title Investigation of electro-physical, mechanical, thermal and optical properties of semiconductors, semiconductor and metallic films. popup.stage_title Head Tulupenko Victor N., Registration Date 25-07-2013 Organization Donbass State Engineering Academy popup.description2 Object of study: Si0.8Ge0.2/Si/Si0.8Ge0.2 quantum well, doped phosphorus and grown in 100 crystallographic direction. The aim is to solve complex problems related to the calculation of the absorption coefficient delta-doped quantum wells, establishing communication energy dependence of the impurity on the degree of ionization of impurities, establishing inhomogeneity of temperature distribution in the semiconductor plate by passing pulsed current. Purpose of the study - change in impurity energy connection and temperature parameters in the delta-doped quantum wells, a delay effect of temperature change of the crystal lattice. Research Methods - We used a set of theoretical methods. This report examined theoretically binding energy ?-doped layer located both in the center and at the edge of the quantum well (QW), for example Si0.8Ge0.2/Si/Si0.8Ge0.2 QA n-type phosphorus alloy . Calculations are made for the case of not very large impurity concentrations, when the impurity band is not formed and still be regarded as an isolated impurity. Based samouzhhodzhenoho Schr?dinger equation, Poisson and electro shown that impurity binding energy depends on the degree of ionization of impurities and noticeable in the case of doping in the QW edge. Also theoretically examined the effect of delay changes temperatru crystal hradky during the initial heating time interval by successive short excitation pulses of electric field changes in dislidzhenni settlement holes rezonantnyh states boron doped silicon. The result showed that the impact ionization delta doped layer on the impurity energy connection really exists and depends on the delta layer deterioration in the middle of QW. Blackout impurity energy increases with increasing ionization delta layer deterioration in QA, and the most significant increase for QW doped to an end. In this case, two factors induce these increases - Delta ionization layer deterioration and displacement of the central cell, which it accompanies. It was possible to calculate the absorption coefficient for the two temperatures. Found that at T = 77 K the distortion energy profile QC hartriyevskym potential for both cases is small and therefore the spectra coincide. Temperature increases with increasing occupancies and displacement is of size quantization subbands, demonstrating the results of calculation. The largest shift is observed for the QW subbands in doped edge. Product Description popup.authors Акімов Володимир Ігорович Білих Валерій Георгійович Богданова Татьяна Леонідівна Будніков Єгор Юрійович Демедюк Роман Олександрович Дмитриченко Татьяна Вікторівна Костенко Володимир Михайлович Огньотова Жанна Миколаївна Соломіна Вікторія Федорівна Тишкевич Анатолій Володимирович Тулупенко Віктор Миколайович Тютюнник Антон Михайлович Фоміна Оксана Сергіївна popup.nrat_date 2020-04-02 Close