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Information × Registration Number 0213U005890, 0112U006102 , R & D reports Title Fundamental characteristics and problems of diagnosis and nanowire atomically thin field devices based on diamond, silicon and graphene popup.stage_title Head Machulin Volodymir Fedorovich, Registration Date 24-09-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The purpose of the project is to study the fundamental characteristics of one-and two-dimensional nano transіstors based on the heterostructures on insulator and the impact of nanoscale effects, including the effects of size quantization on their characteristics, to develop methods of electrical and optical diagnostics of devices and structures. At the first stage of work there had been investigated: the effect of CCD in super fine (15.10 nm) slightly doped silicon channels KNI MOS field-effect transistors, the mobility of charge carriers in many-gate FinFET devices with wide rib to 20 nm; charge trapping in shallow traps in the transition layer of dielectrics with high dielectric constant; charge trapping in centres in silicon dioxide located on the tunneling distance from the silicon channel nanowire field devices of standard type (inverse mode) and the newest type - junction less nanowire transistors. Analytical model of charge coupling in KNI channels of MOS transistors with super slim slightly doped silicon, including quantum effects, was developed. It was built theoretical model antehysteresis effect in resistive graphene layer situated on ferroelectric substrate. Product Description popup.authors І.П.Тягульський А.В.Русавський В.І. Смірная В.С.Лисенко М.В.Стріха О.М.Назаров С.І.Тягульський Т.О. Руденко popup.nrat_date 2020-04-02 Close