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Information × Registration Number 0213U006516, 0113U005303 , R & D reports Title Theoretical and experimental investigation of temperature dependence of contact resistance for ohmic contacts to n-Si with n+-n stepwise doping. popup.stage_title Head Konakova Raisa Vasil'evna, Registration Date 05-10-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Ohmic contacts to silicon with the n+-n stepwise doping were object of conducted research. Band diagrams and temperature dependences of contact resistivity were got as a result of conducted mathematical simulation for contacts with the thickness of high doped layer 5 and 10 nm. The analytical calculation of specific resistivity rс(Т) for ohmic contacts to the n+-n structure of silicon was conducted for a limit case with doping density of n+ area 5·10^20 cm^-3, n-area 10^16 cm^-3 and thickness of n+ layer 5 and 10 nm. There is electron degeneracy in a n+ layer in considered case. Band diagrams were calculated also for n=10^16 см^-3 and n-layer thickness of 5 and 10 nm and doping density in n+-layer 5·10^19, 10^20, 2·10^20 см^-3. All values of n+ used for a calculation satisfy condition of n+>Nc (here Nc is an effective density of states in the conductivity band). Specific contact resistivity were calculated as series connection of two resistances: rth - specific contact resistivity, related to the thermoionic electrons flow through barrier in the interface metal-n+ and rc2, as effective specific contact resistivity of weak doped n-layer of Si. It is shown that in the case of rc2>rth contact will be ohmic. Product Description popup.authors Бєляєв Олександр Євгенович Виноградов Анатолій Олегович Конакова Раїса Василівна Кудрик Я.Я. Романець Петро Миколайович Саченко Анатолій Васильович Шеремет Володимир Миколайович popup.nrat_date 2020-04-02 Close