1 documents found
Information × Registration Number 0213U006677, 0113U001209 , R & D reports Title The development of nanotechnology of Ge structures on basic of GaAs and Si for manufacturing of electronic devices popup.stage_title Head Shwarts Yuriy Mikhailovich, Registration Date 23-12-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The technology regimes are found which characterize the processes of thermal vacuum deposition of thermal-sensitive nano-dimensional Ge films on GaAs. The new design of resistance thermometers on base of nano-dimensional Ge films on GaAS was developed. Product Description popup.authors Борблик В.Л. Фонкіч О.М. Шварц М.М. popup.nrat_date 2020-04-02 Close
R & D report
The development of nanotechnology of Ge structures on basic of GaAs and Si for manufacturing of electronic devices
Head: Shwarts Yuriy Mikhailovich. The development of nanotechnology of Ge structures on basic of GaAs and Si for manufacturing of electronic devices. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0213U006677
1 documents found

Updated: 2026-03-24


Роздрукувати цю сторінку