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Information × Registration Number 0213U006852, 0113U005303 , R & D reports Title Theoretical and experimental investigation of temperature dependence of contact resistance for ohmic contacts to n-Si with n+-n stepwise doping. popup.stage_title Head Konakova Raisa Vasil'evna, Registration Date 08-01-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Temperature dependence of specific contact resistivity rс(Т) of ohmic contacts was researched in the range of temperatures 12,4-380 К and 125-380 К, measured by the long line method for lateral and vertical geometry of contacts. It is shown that in area of temperatures 125-380 К regardless of n+-n - step of alloying creation method rс grows on the exponential law with the increase of measuring temperature. In the temperature range of 12,4-380 К rс(Т) dependence consists of two areas: low temperature, with rс value decreasing on an exponential law in the temperature range of 12,4-70 К and growing on the exponential law of rс value in the temperature range of 70-380 К. Experimental rс(Т) dependences confirm the basic conclusions of mathematical design of ohmic contacts forming mechanism with n+-n - alloying step in the interface area of silicon. Product Description popup.authors Бєляєв Олександр Євгенович Виноградов Анатолій Олегович Конакова Раїса Василівна Кудрик Ярослав Ярославович Мілєнін Віктор Володимирович Романець Петро Миколайович Саченко Анатолій Васильович Шеремет Володимир Миколайович popup.nrat_date 2020-04-02 Close