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Information × Registration Number 0213U007177, 0108U004572 , R & D reports Title Development and creation of the II - VI and III - V sigle crystals growth technologies for the electronic engineering popup.stage_title Head Tomashik Vasyl Mykolayevich, Доктор хімічних наук Registration Date 16-04-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Report of scientific researche work: 42 p., 18 fig. 6 tabl.., 44 sources. Effective technologies of growing of high-resistance single-crystals of CdTe and ZnxCd1-xTe solid solutions were worked out in this work using a solution melt method and method of the directed crystallization of own fusions under high pressure of inert gas for making on their basis the effective detectors of Х- and -radiation. The technological setting intended for growing of epitaxial layers InxGa1- xAs (x > 0,84) with p- and n-type conductivity by the method of liquid phase epitaxy was made. The technological modes of growing of epitaxial layers with x = 0.88, 0.90, 0.93 and 0.95 on InAs substrates were worked out. The prototypes of IR sensors based on InAs p-n-junctions and injection sources of infrared radiation in the spectral range of 3.0-3.6 mkm were made. Experience technologies and optimal modes of production of defect-free surfaces of the CdTe, ZnxCd1-xTe, InSb, InAs, GaAs and InxGa1-xAs plates by the chemical cutting, chemical-mechanical and chemical-dynamic polishing were proposed. Product Description popup.authors Ворощенко А.Т. Капуш О.А. Кравецький М.Ю. Кравцова А.С. Лукіянчук Е.М. Луцишин І.Г. Мазарчук І.О. Маланич Г.П. Морозовська В.Й. Омельчук Б.В. Палатний В.М. Пащенко Г.А. Седлецька І.І. Стратійчук І.Б. Сукач А.В. Томашик В.М. Томашик З.Ф. Тріщук Л.І. Фомін О.В. Яшин А.І. popup.nrat_date 2020-04-02 Close