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Information × Registration Number 0213U007261, 0111U006258 , R & D reports Title Physical fundamentals of processes of formation semiconducting nanostructures for devices of electronics and photonics popup.stage_title Head Skryshevsky Valeri, Доктор фізико-математичних наук Registration Date 20-05-2013 Organization Taras Shevchenko Kiev university popup.description2 Methods of structures with homogeneous organic varions thickness layers manufacture were optimized. Appearance conditions of negative differential capacitance region in CV characteristics of metal-insulator-semiconductor structures wich buildin insulator nanoclaster layers were defined. Fabrication of hydrogen containing silicon powder was optimized, two tanks device for self-controlled production of hydrogen has been designed. Variation of the injected ellectrons to holes ratio in Ti-TiO2-pSi heterostructures was shown to cause the effect of negative differential conductivity. Techniques for sulphide nanolayers syntesis on the inner surface of the porous silicon were elaborated. Possibility to use nanocomposite SiO2(Si) films as an ambient for storage and retention of electrical charge in energyindependent memory was shown. Methods of selective GaAs quantum dots formation in nanoporous Si film deposited on the buffer layer were elaborated. Product Description popup.authors Іванов Іван Іванович Ільченко Володимир Васильович Вербицький Володимир Григорович Гаврильченко Ірина Валеріївна Евтух Анатолій Антонович Козинець Олексій Володимирович Козонущенко Олександр Іванович Кузнецов Геннадій Васильович Лисоченко Сергій Васильович Литвиненко Сергій Васильович Манілов Антон Ігоревич Опилат Віталій Яковлевич Скришевсткий Валерій Антонович Третяк Олег Васильович Усенко Володимир Олексійович Циганова Ганна Іскаківна Шкавро Анатолій Григорович Шулімов Юрій Григорович popup.nrat_date 2020-04-02 Close