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Registration Number

0214U000452, 0113U000909 , R & D reports

Title

Formation methods development of the nanostructure objects on the II-VI semiconductor surfaces by the chemical etching and colloidal synthesis in the solutions, their introduction in solid state matrix and investigation of their optical and electrophysical properties.

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Head

Tomashik V. M., Доктор хімічних наук

Registration Date

05-03-2014

Organization

Institute of Semiconductor Physics of National Academy of Sciences of Ukrain

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Report of scientific research work: 51 p., 17 fig., 5 tabl., 10 sources. The objects of research are the nanostructured objects formation on the CdTe single crystals surface and ZnхCd1-хTe solid solutions by chemical etching, light-emitting properties of CdTe, CdS nanocrystals and light-emitting structures that contain pure or combined/connected with antibody-colloidal CdSe quantum dots in the shell of ZnS, dried on solid substrates. The purpose is to develop the effective methods of forming nanostructured objects on the surface of АIIВVI semiconductors single crystals by chemical etching, colloidal synthesis of nanosized semiconductor materials АIIВVI, followed by incorporation into solid matrices and study the properties of obtained light-emitting nanocomposites. The investigation methods are profilograph and microstructural analyzes, photoluminescence spectra in a wide temperature range (T = 4.2-300 K) using laser excitation sources and Raman spectra. Anotation: The effective methods of nanostructured objects formation on the surface of АIIВVI semiconductors by chemical etching have been developed and optimized. It is shown that the application of chemical mechanical and chemical dynamic polishing combined method of CdTe single crystals and ZnхCd1-хTe solid solutions with new developed etchants H2O2?HBr?solvent obtained nanoscale surface topography, which formed nonperiodic needle nanoformation of different sizes. The methodology for CdS: Cu and CdS:Zn nanocrystals (NC) synthesis in polymer matrices A, complex spectra of CdS NC optical absorption and photoluminescence depending on the concentration of impurities introduced by Cu and Zn in the range of (1-10)% have deen conducted. The Cu impurity is concentrated on the surface of vacancy-type defects NC passivation, which are surface emitters centers have been established. It is shown that impurity of zinc, however, enters the amount of NC CdS, creating more superficial defects of radiative recombination centers. The dependence of the luminescent characteristics of bio-conjugated QDs on the duration and temperature of thermal annealing have been found. It is shown that the optimal mode of treatment light-emitting structures of bio-conjugated QDs is irradiation temperature 40-60 ?C with light absorption QDs area for several hours, and the most suitable substrates are polished Si wafers and glass slide. The thermal annealing of bio-conjugated QDs stimulates the components interdiffusion in CdSe/ZnS heteroboundary, and light absorption in QDs during annealing stimulates the oxidation of core and prevents processes interdiffusion have been established. The expected suppositions about the research object development is the improving method of manufacturing a light-emitting structures, which are perspective to create a new highly sensitive method of bio-systems registration involving quantum dots.

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Єрмаков В.М.
Борковська Л.В.
Будзуляк С.І.
Вахняк Н.Д.
Демчина Л.А.
Калитчук С.М.
Капуш О.А.
Корбутяк Д.В.
Корсунська Н.О.
Крюченко Ю.В.
Курик А.О.
Мазарчук І.О.
Морозовська В.Й.
Палатний В.М.
Стара Т.Р.
Стратійчук І.Б.
Томашик З.Ф.
Тріщук Л.І.
Щербина Л.В.
Яшин А.І.

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2020-04-02