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Information × Registration Number 0214U001025, 0113U003105 , R & D reports Title Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices popup.stage_title Head Venger Evgeniy Fedorovych, Registration Date 15-01-2014 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Structure and mechanisms of formation of heavily doped and strongly compensated thermosensitive Ge on GaAs films were investigated. The nanorelief surface topography of heavily doped and strongly compensated Ge films was defined. It was found that depending on film thickness the {113} and {227} facets in nanorelief surface are dominated. Prototypes of sensors for bolometric measurements of temperature spatial distribution were produced.5481 Product Description popup.authors Є.Ф.Венгер І.Ю.Неміш В.В.Мітін В.В.Холевчук В.Ф.Мітін Л.А.Матвєєва О.С.Забродська popup.nrat_date 2020-04-02 Close
R & D report
Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices
Head: Venger Evgeniy Fedorovych. Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices. (popup.stage: ). Institute of Semiconductor Physics of NAS of Ukraine. № 0214U001025
1 documents found

Updated: 2026-03-21


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