Search academic texts

Information × Registration Number 0214U001028, 0110U006038 , R & D reports Title Development of equipment for high-resolution X-ray diagnostic of nanomaterials, nanostructures and amorphous alloys popup.stage_title Head Kladko Vasyl Petrovych, Registration Date 15-01-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Morphological and structural properties of GaN NW grown on Si(111) were investigated. Spatial orientation distribution of nanowires in ensembles and their deformation state was established with help of X-ray diffractometry methods. Information about deformations, size of NW and orientation distribution in NW ensembles can be obtained from shape and position of intensity distribution of diffraction maximum. Analysis of strain state and strain relaxation processes in such structures at different stages of the epitaxial growth was provided. Methods for the analysis of experimental intensity distribution maps in NW structures, which allowed to measure the level of strain, the degree of relaxation, geometric dimensions were developed. Product Description popup.authors Єфанов Олександр Миколайович Гудименко Олександр Йосипович Кучук Андріан Володимирович Максименко Зоя Василівна Мачулін Володимир Федрович Проскуренко Наталя Миколаївна Садова Тетяна Володимирівна Сафрюк Надія Володимирівна Слободян Микола Васильович Стадник Олександр Анатолійович popup.nrat_date 2020-04-02 Close