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Information × Registration Number 0214U001133, 0113U004482 , R & D reports Title Effects of the interface and surface in silicon and carbon nanosystems. popup.stage_title Head Striha M.V., Registration Date 21-01-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Aim of the work: study both the physical effects, connected with interface and surface in carbon and silicon nanostructures, and the possibilities of their applications in the hybrid electronic and optoelectronic devices of the new generation. A model for rival mechanisms of hysteresis that appears in the dependence of the resistivity of graphene channels created on substrates of various nature on the gate voltage has been developed. Two types of hysteresis were distinguished: direct (associated with the presence of adsorbates with dipole moments on the surface and the interface) and inverse (associated with the capture of charge carriers from the graphene layer by the localized states at the interface graphene-substrate). It is shown that the Joule effect, caused by a high-frequency ac electric current in graphene, creates a pronounced temperature gradient in a ferroelectric substrate. The graphene layers grown on Ni from a-SiC/Ni structure by vacuum annealing were investigated by micro-Raman spectroscopy method. Product Description popup.authors Клюй М.І. Курчак А.І. Кухтарук С.М. Морозовська Г.М. Ніколенко А.С. Наумов А.В. Соколов В.М. Стрельчук В.В. popup.nrat_date 2020-04-02 Close