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Information × Registration Number 0214U001195, 0112U005307 , R & D reports Title Application of basic technologies of production of semiconductor heteroepitaxial structures with nanodimension elements on the base of solid solutions A3B5 for photoelectronic devices on unit MOCVD D-180GaN popup.stage_title Head Krukovskiy Semen, Registration Date 23-01-2014 Organization Public Joint-stock Company "Scientific and industrial concern "Nauka" popup.description2 The statement of the basic production technology on the plant of high-performance InGaN/GaN/SiC semi-conductor heterostructures with nanoscale elements for the manufacture of powerful and resistant to degradation blue LED by flip-chip technology is carried out. Crystallization technology of heterostructures InGaN / GaN / SiC by MOCVD vapor phase epitaxy is developed. The research of key parametres of heterostructures InGaN/GaN/SiC using galvanomagnetic researches, photoluminescence, electronic microscopy, high-distributive x-ray diffractometry, electrical profiling and micro x-ray diffraction analysis is conducted. Using the developed basic technological processes the party of semi-conductor hetero-epitaxial structures InGaN/GaN with nanoscale elements for manufacturing of light-emitting diode structures is made. The infrastructure of a technological site for manufacturing epitaxial structures by method of MOCVD epitaxy for photoelectronic devices on plant MOCVD D-180GaN is created. Product Description popup.authors Євтух А.А. Авдеєва О.В. Богомолова С.В. Бойко М.П. Бонковський Е.Л. Ваків О.В. Галстян Г.Г. Гаруст О.Ю. Глуховська Ю.Ю. Голуб В.В. Гончаров С.М. Гуренко В.О. Денисенко В.В. Каіра В.В. Калініченко Т.Є. Карпенко П.Д. Клименко Л.П. Ковальчук О.Ф. Кость Я.Я. Котовський В.В. Кравцов В.А. Круковський Р.С. Круковський С.І. Ларкін Д.С. Лаунець В.Л. Лукін П.В. Межибовський А.П. Михащук Ю.М. Мрихін І.О. Новіков Є.І. Парфенюк П.В. Пастушенко Т.А. Пастушенко Ю.М. Педченко Ю.М. Сухов М.Є. Хмилєвська О.В. Шибук О.В. popup.nrat_date 2020-04-02 Close