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Information × Registration Number 0214U001398, 0113U001490 , R & D reports Title The development of plasma nanotechnology of the nanostructured aluminium and boron nitrides layers deposition for microwave devices surface protection popup.stage_title Head Zayats Mykola Sergiyovich, Registration Date 10-02-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 As a result of IV-phase of experimental samples were made of semiconductor nanostructures with layers of AlN, GaN, BN and a-C: H: N, which are formed in three ways: by magnetron sputtering respective targets by chemical deposition of metal-organic compounds from the vapor phase and method stimulated plasma vapor deposition techniques were developed and implemented comprehensive studies of patterns of deposition processes above the aforementioned films with the required structural, optical and electrical properties for their practical use in modern electronic and optoelectronic devices. The tests produced experimental models in terms of the stability degradation of parameters depending on temperature, radiation, etc.. Product Description popup.authors В.Б. Лозінський В.Г. Бойко М.І. Клюй М.С. Заяць popup.nrat_date 2020-04-02 Close