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Information × Registration Number 0214U001441, 0111U006452 , R & D reports Title 3.Development of physico-technological basis for manufacturing of components A3N nanoelectronics devices for optoelectronics and microwave technique popup.stage_title Head Belyaev Alexandr, Доктор фізико-математичних наук Registration Date 17-02-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 In 2013, the research on the optimization of growth parameters to obtain structurally perfect nitride epitaxial layers by gas phase epitaxy of metal-organic compounds and molecular beam epitaxy was continued. The effects of self-heating AlGaN/GaN HEMT-structures in applied electric fields using complex of optical diagnostic methods were studied. The dependence of temperature of HEMT-structures from the applied voltage was determined. An adaptation of the X-ray techniques to analyze the parameters of multilayer structures with complex hexagonal lattice was carried out. Methodological bases of reciprocal space mapping were developed. The methodology of the reciprocal space maps calculating for symmetric and asymmetric reflexes in the presence of crystal dislocations of different types were developed. The results were showed that the developed method of numerical calculation of the angular distribution of X-ray scattering can be used for quantitative X-ray diffraction analysis of the deformation of the systems with filamentary nanocrystals of different shape and orientation. Product Description popup.authors Кладько Василь Петрович Конакова Раїса Василівна Кочелап Вячеслав Олександрович Стрільчук Віктор Васильович popup.nrat_date 2020-04-02 Close